Noise Model of a Reverse-biased Cold-fet Applied to the Characterization of Its Enr
نویسنده
چکیده
This paper presents a broadband-noise circuit model for a “cold”-FET (Vds 0 V) with a reverse-biased gate. The noise model includes two intrinsic uncorrelated noise-current sources whose spectral densities are determined from measurement of the device’s S parameters and noise powers. The model is used to characterize the device’s excess Figure 3 Radiation patterns in the (a) x–z and (b) y–z planes: EEE computed result; — measured result 326 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 40, No. 4, February 2
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تاریخ انتشار 2003